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| PartNumber | IXYP10N65C3D1 | IXYP10N65C3D1M | IXYP10N65C3 |
| Description | IGBT Transistors DISC IGBT XPT-GENX3 | IGBT Transistors DISC IGBT XPT-GENX3 | IGBT 650V 30A 160W TO220 |
| Manufacturer | IXYS | IXYS | - |
| Product Category | IGBT Transistors | IGBT Transistors | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Series | Planar | - | - |
| Packaging | Tube | - | - |
| Brand | IXYS | IXYS | - |
| Product Type | IGBT Transistors | IGBT Transistors | - |
| Factory Pack Quantity | 50 | 50 | - |
| Subcategory | IGBTs | IGBTs | - |
| Tradename | XPT, GenX3 | - | - |
| Package / Case | - | TO-220-3 | - |
| Mounting Style | - | Through Hole | - |
| Configuration | - | Single | - |
| Collector Emitter Voltage VCEO Max | - | 650 V | - |
| Collector Emitter Saturation Voltage | - | 2.27 V | - |
| Maximum Gate Emitter Voltage | - | 20 V | - |
| Continuous Collector Current at 25 C | - | 15 A | - |
| Pd Power Dissipation | - | 53 W | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 175 C | - |
| Continuous Collector Current Ic Max | - | 50 A | - |
| Gate Emitter Leakage Current | - | 100 nA | - |