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| PartNumber | IXYP20N65C3 | IXYP20N65C3D1 | IXYP20N65C3D1M |
| Description | Discrete Semiconductor Modules Disc IGBT XPT-GenX3 TO-220AB/FP | IGBT Transistors DISC IGBT XPT-GENX3 | IGBT Transistors 650V/18A XPT IGBT C3 Copacked TO-220 |
| Manufacturer | IXYS | IXYS | IXYS |
| Product Category | Discrete Semiconductor Modules | IGBT Transistors | IGBT Transistors |
| RoHS | Y | Y | Y |
| Product | Power Semiconductor Modules | - | - |
| Type | GenX3 | - | - |
| Mounting Style | Through Hole | - | Through Hole |
| Package / Case | TO-220AB-3 | - | TO-220-3 |
| Packaging | Tube | Tube | Tube |
| Brand | IXYS | IXYS | IXYS |
| Product Type | Discrete Semiconductor Modules | IGBT Transistors | IGBT Transistors |
| Factory Pack Quantity | 50 | 50 | 50 |
| Subcategory | Discrete Semiconductor Modules | IGBTs | IGBTs |
| Tradename | XPT | XPT, GenX3 | XPT |
| Technology | - | Si | Si |
| Series | - | Planar | IXYP20N65 |
| Configuration | - | - | Single |
| Collector Emitter Voltage VCEO Max | - | - | 650 V |
| Collector Emitter Saturation Voltage | - | - | 2.27 V |
| Maximum Gate Emitter Voltage | - | - | 30 V |
| Continuous Collector Current at 25 C | - | - | 18 A |
| Pd Power Dissipation | - | - | 50 W |
| Minimum Operating Temperature | - | - | - 55 C |
| Maximum Operating Temperature | - | - | + 175 C |
| Continuous Collector Current Ic Max | - | - | 18 A |
| Gate Emitter Leakage Current | - | - | 100 nA |
| Unit Weight | - | - | 0.211644 oz |