Jantx2N2369AUB vs JANTX2N2369A vs JANTX2N2369A/TR

PartNumber	Jantx2N2369AUB	JANTX2N2369A	JANTX2N2369A/TR
Description	Bipolar Transistors - BJT Small-Signal BJT	Bipolar Transistors - BJT Small-Signal BJT	Bipolar Transistors - BJT
Manufacturer	Microchip	Microchip	Microchip
Product Category	Bipolar Transistors - BJT	Bipolar Transistors - BJT	Bipolar Transistors - BJT
RoHS	N	N	N
Technology	Si	Si	Si
Mounting Style	Through Hole	Through Hole	Through Hole
Transistor Polarity	NPN	NPN	NPN
Configuration	Single	Single	Single
Collector Emitter Voltage VCEO Max	15 V	15 V	15 V
Collector Base Voltage VCBO	40 V	40 V	40 V
Emitter Base Voltage VEBO	4.5 V	4.5 V	4.5 V
Collector Emitter Saturation Voltage	0.45 V	200 mV	0.2 V
Minimum Operating Temperature	- 65 C	- 65 C	- 65 C
Maximum Operating Temperature	+ 200 C	+ 200 C	+ 200 C
DC Current Gain hFE Max	120	120 at 10 mA, 350 mVDC	120 at 100 mA, 1 V
Packaging	Waffle	Bulk	-
Brand	Microchip / Microsemi	Microchip / Microsemi	Microchip / Microsemi
DC Collector/Base Gain hfe Min	20	40 at 10 mA, 350 mVDC	20 at 100 mA, 1 V
Pd Power Dissipation	500 mW	360 mW	0.36 W
Product Type	BJTs - Bipolar Transistors	BJTs - Bipolar Transistors	BJTs - Bipolar Transistors
Factory Pack Quantity	1	1	1
Subcategory	Transistors	Transistors	Transistors
Package / Case	-	TO-18-3	TO-206AA-3
Maximum DC Collector Current	-	-	0.1 A