PartNumber | JANTX2N3439U4 | JANTX2N3439L | JANTX2N3439 |
Description | Bipolar Transistors - BJT Power BJT | Bipolar Transistors - BJT Power BJT | Bipolar Transistors - BJT Power BJT |
Manufacturer | Microchip | Microchip | Microchip |
Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
Packaging | Tray | Foil Bag | Bulk |
Brand | Microchip / Microsemi | Microchip / Microsemi | Microchip / Microsemi |
Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
Subcategory | Transistors | Transistors | Transistors |
RoHS | - | N | N |
Factory Pack Quantity | - | 1 | 1 |
Technology | - | - | Si |
Mounting Style | - | - | Through Hole |
Package / Case | - | - | TO-39-3 |
Transistor Polarity | - | - | NPN |
Configuration | - | - | Single |
Collector Emitter Voltage VCEO Max | - | - | 350 V |
Collector Base Voltage VCBO | - | - | 450 V |
Emitter Base Voltage VEBO | - | - | 7 V |
Collector Emitter Saturation Voltage | - | - | 500 mV |
Maximum DC Collector Current | - | - | 1 A |
Minimum Operating Temperature | - | - | - 65 C |
Maximum Operating Temperature | - | - | + 200 C |
DC Current Gain hFE Max | - | - | 160 at 20 mA, 10 V |
DC Collector/Base Gain hfe Min | - | - | 40 at 20 mA, 10 V |
Pd Power Dissipation | - | - | 800 mW |