JANTX2N4150 vs JANTX2N4150S vs JANTX2N4150 JANTXV2N4150

 
PartNumberJANTX2N4150JANTX2N4150SJANTX2N4150 JANTXV2N4150
DescriptionBipolar Transistors - BJT Power BJTBipolar Transistors - BJT Power BJTINSTOCK
ManufacturerMicrochipMicrochip-
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJT-
RoHSNN-
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-5-3--
Transistor PolarityNPN--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max70 V--
Collector Base Voltage VCBO100 V--
Emitter Base Voltage VEBO10 V--
Collector Emitter Saturation Voltage600 mV--
Maximum DC Collector Current10 A--
Minimum Operating Temperature- 65 C--
Maximum Operating Temperature+ 200 C--
DC Current Gain hFE Max200 at 1 A, 5 VDC--
PackagingBulkBulk-
BrandMicrochip / MicrosemiMicrochip / Microsemi-
DC Collector/Base Gain hfe Min50 at 1 A, 5 VDC--
Pd Power Dissipation1 W--
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
Factory Pack Quantity11-
SubcategoryTransistorsTransistors-
Top