Jan2N2222A vs Jan2N2222A/TR vs JAN2N2222A HCI

 
PartNumberJan2N2222AJan2N2222A/TRJAN2N2222A HCI
DescriptionBipolar Transistors - BJT Small-Signal BJTBipolar Transistors - BJT
ManufacturerMicrochipMicrochip-
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJT-
RoHSNN-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-18-3TO-206AA-3-
Transistor PolarityNPNNPN-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max50 V50 V-
Collector Base Voltage VCBO75 V75 V-
Emitter Base Voltage VEBO6 V6 V-
Collector Emitter Saturation Voltage1 V0.3 V-
Maximum DC Collector Current800 mA800 mA-
Maximum Operating Temperature+ 200 C+ 200 C-
PackagingBulk--
BrandMicrochip / MicrosemiMicrochip / Microsemi-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
Factory Pack Quantity11-
SubcategoryTransistorsTransistors-
Technology-Si-
Minimum Operating Temperature-- 65 C-
DC Current Gain hFE Max-325 at 1 mA, 10 V-
DC Collector/Base Gain hfe Min-30 at 500 mA, 10 V-
Pd Power Dissipation-0.5 W-
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