Jan2N2369A vs Jan2N2369AUA vs JAN2N2369A/TR

PartNumber	Jan2N2369A	Jan2N2369AUA	JAN2N2369A/TR
Description	Bipolar Transistors - BJT Small-Signal BJT	Bipolar Transistors - BJT Small-Signal BJT	Bipolar Transistors - BJT
Manufacturer	Microchip	Microchip	Microchip
Product Category	Bipolar Transistors - BJT	Bipolar Transistors - BJT	Bipolar Transistors - BJT
RoHS	N	N	N
Technology	Si	-	Si
Mounting Style	Through Hole	-	Through Hole
Package / Case	TO-18-3	-	TO-206AA-3
Transistor Polarity	NPN	-	NPN
Configuration	Single	-	Single
Collector Emitter Voltage VCEO Max	15 V	-	15 V
Collector Base Voltage VCBO	40 V	-	40 V
Emitter Base Voltage VEBO	4.5 V	-	4.5 V
Collector Emitter Saturation Voltage	200 mV	-	0.2 V
Minimum Operating Temperature	- 65 C	-	- 65 C
Maximum Operating Temperature	+ 200 C	-	+ 200 C
DC Current Gain hFE Max	120 at 10 mA, 350 VDC	-	120 at 100 mA, 1 V
Packaging	Bulk	Waffle	-
Brand	Microchip / Microsemi	Microchip / Microsemi	Microchip / Microsemi
DC Collector/Base Gain hfe Min	40 at 10 mA, 350 VDC	-	20 at 100 mA, 1 V
Pd Power Dissipation	360 mW	-	0.36 W
Product Type	BJTs - Bipolar Transistors	BJTs - Bipolar Transistors	BJTs - Bipolar Transistors
Factory Pack Quantity	1	1	1
Subcategory	Transistors	Transistors	Transistors
Maximum DC Collector Current	-	-	0.1 A