PartNumber | Jan2N2605 | Jan2N2605/TR | JAN2N2608 |
Description | Bipolar Transistors - BJT Small-Signal BJT | Bipolar Transistors - BJT | INSTOCK |
Manufacturer | Microchip | Microchip | - |
Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | - |
RoHS | N | N | - |
Packaging | Bulk | - | - |
Brand | Microchip / Microsemi | Microchip / Microsemi | - |
Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | - |
Factory Pack Quantity | 1 | 1 | - |
Subcategory | Transistors | Transistors | - |
Technology | - | Si | - |
Mounting Style | - | Through Hole | - |
Package / Case | - | TO-206AB-3 | - |
Transistor Polarity | - | PNP | - |
Configuration | - | Single | - |
Collector Emitter Voltage VCEO Max | - | 60 V | - |
Collector Base Voltage VCBO | - | 70 V | - |
Emitter Base Voltage VEBO | - | 6 V | - |
Collector Emitter Saturation Voltage | - | 0.3 V | - |
Maximum DC Collector Current | - | 30 mA | - |
Minimum Operating Temperature | - | - 65 C | - |
Maximum Operating Temperature | - | + 200 C | - |
DC Current Gain hFE Max | - | 450 at 500 uA, 5 V | - |
DC Collector/Base Gain hfe Min | - | 30 at 10 mA, 5 V | - |
Pd Power Dissipation | - | 400 mW | - |