Jan2N2905A vs Jan2N2905A/TR vs JAN2N2905A/MILITARY

 
PartNumberJan2N2905AJan2N2905A/TRJAN2N2905A/MILITARY
DescriptionBipolar Transistors - BJT Small-Signal BJTBipolar Transistors - BJTINSTOCK
ManufacturerMicrochipMicrochip-
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJT-
RoHSNN-
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-39-3TO-205AD-3-
Transistor PolarityPNPPNP-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max60 V60 V-
Collector Base Voltage VCBO60 V60 V-
Emitter Base Voltage VEBO5 V5 V-
Collector Emitter Saturation Voltage400 mV0.4 V-
Maximum DC Collector Current600 mA600 mA-
Minimum Operating Temperature- 65 C- 65 C-
Maximum Operating Temperature+ 200 C+ 200 C-
PackagingBulkReel-
BrandMicrochip / MicrosemiMicrochip / Microsemi-
Pd Power Dissipation800 mW3 W-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
Factory Pack Quantity1100-
SubcategoryTransistorsTransistors-
DC Current Gain hFE Max-450 at 1 mA, 10 V-
DC Collector/Base Gain hfe Min-50 at 500 mA, 10 V-
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