PartNumber | Jan2N2905A | Jan2N2905A/TR | JAN2N2905A/MILITARY |
Description | Bipolar Transistors - BJT Small-Signal BJT | Bipolar Transistors - BJT | INSTOCK |
Manufacturer | Microchip | Microchip | - |
Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | - |
RoHS | N | N | - |
Technology | Si | Si | - |
Mounting Style | Through Hole | Through Hole | - |
Package / Case | TO-39-3 | TO-205AD-3 | - |
Transistor Polarity | PNP | PNP | - |
Configuration | Single | Single | - |
Collector Emitter Voltage VCEO Max | 60 V | 60 V | - |
Collector Base Voltage VCBO | 60 V | 60 V | - |
Emitter Base Voltage VEBO | 5 V | 5 V | - |
Collector Emitter Saturation Voltage | 400 mV | 0.4 V | - |
Maximum DC Collector Current | 600 mA | 600 mA | - |
Minimum Operating Temperature | - 65 C | - 65 C | - |
Maximum Operating Temperature | + 200 C | + 200 C | - |
Packaging | Bulk | Reel | - |
Brand | Microchip / Microsemi | Microchip / Microsemi | - |
Pd Power Dissipation | 800 mW | 3 W | - |
Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | - |
Factory Pack Quantity | 1 | 100 | - |
Subcategory | Transistors | Transistors | - |
DC Current Gain hFE Max | - | 450 at 1 mA, 10 V | - |
DC Collector/Base Gain hfe Min | - | 50 at 500 mA, 10 V | - |