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| PartNumber | JAN2N2906AUB | Jan2N2906AUA | Jan2N2906AUA/TR |
| Description | Bipolar Transistors - BJT Small-Signal BJT | Bipolar Transistors - BJT Small-Signal BJT | Bipolar Transistors - BJT |
| Manufacturer | Microchip | Microchip | Microchip |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
| RoHS | N | N | N |
| Packaging | Waffle | Waffle | - |
| Brand | Microchip / Microsemi | Microchip / Microsemi | Microchip / Microsemi |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
| Factory Pack Quantity | 1 | 1 | 1 |
| Subcategory | Transistors | Transistors | Transistors |
| Technology | - | - | Si |
| Mounting Style | - | - | SMD/SMT |
| Package / Case | - | - | LCC-4 |
| Transistor Polarity | - | - | PNP |
| Configuration | - | - | Single |
| Collector Emitter Voltage VCEO Max | - | - | 60 V |
| Collector Base Voltage VCBO | - | - | 60 V |
| Emitter Base Voltage VEBO | - | - | 5 V |
| Collector Emitter Saturation Voltage | - | - | 0.4 V |
| Maximum DC Collector Current | - | - | 600 mA |
| Minimum Operating Temperature | - | - | - 65 C |
| Maximum Operating Temperature | - | - | + 200 C |
| DC Current Gain hFE Max | - | - | 175 at 1 mA, 10 V |
| DC Collector/Base Gain hfe Min | - | - | 40 at 100 uA, 10 V |
| Pd Power Dissipation | - | - | 0.5 W |