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| PartNumber | Jan2N3019 | Jan2N3019/TR | JAN2N3019A |
| Description | Bipolar Transistors - BJT Small-Signal BJT | Bipolar Transistors - BJT | |
| Manufacturer | Microchip | Microchip | MOT |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | IC Chips |
| RoHS | N | N | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-5-3 | TO-39-3 | - |
| Transistor Polarity | NPN | NPN | - |
| Configuration | Single | Single | - |
| Collector Emitter Voltage VCEO Max | 80 V | 80 V | - |
| Collector Base Voltage VCBO | 140 V | 140 V | - |
| Emitter Base Voltage VEBO | 7 V | 7 V | - |
| Collector Emitter Saturation Voltage | 200 mV | 0.5 V | - |
| Maximum DC Collector Current | 1 A | 1 A | - |
| Minimum Operating Temperature | - 65 C | - 65 C | - |
| Maximum Operating Temperature | + 200 C | + 200 C | - |
| Packaging | Tray | - | - |
| Brand | Microchip / Microsemi | Microchip / Microsemi | - |
| Pd Power Dissipation | 800 mW | 800 mW | - |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | - |
| Factory Pack Quantity | 1 | 1 | - |
| Subcategory | Transistors | Transistors | - |
| DC Current Gain hFE Max | - | 300 at 500 mA, 10 V | - |
| DC Collector/Base Gain hfe Min | - | 15 at 1 A, 10 V | - |