Jantx2N2219AL vs Jantx2N2219A vs Jantx2N2219A/TR

PartNumber	Jantx2N2219AL	Jantx2N2219A	Jantx2N2219A/TR
Description	Bipolar Transistors - BJT Small-Signal BJT	Bipolar Transistors - BJT Small-Signal BJT	Bipolar Transistors - BJT
Manufacturer	Microchip	Microchip	Microchip
Product Category	Bipolar Transistors - BJT	Bipolar Transistors - BJT	Bipolar Transistors - BJT
RoHS	N	N	N
Technology	Si	Si	Si
Mounting Style	Through Hole	Through Hole	Through Hole
Package / Case	TO-5-3	TO-39-3	TO-39-3
Transistor Polarity	NPN	NPN	NPN
Configuration	Single	Single	Single
Collector Emitter Voltage VCEO Max	50 V	50 V	50 V
Collector Base Voltage VCBO	75 V	75 V	75 V
Emitter Base Voltage VEBO	6 V	6 V	-
Collector Emitter Saturation Voltage	300 mV	300 mV	0.3 V
Maximum DC Collector Current	800 mA	800 mA	800 mA
Minimum Operating Temperature	- 55 C	- 55 C	- 55 C
Maximum Operating Temperature	+ 200 C	+ 200 C	+ 200 C
DC Current Gain hFE Max	325 at 1 mA, 10 VDC	325 at 1 mA, 10 VDC	325 at 1 mA, 10 V
Packaging	Tray	Bulk	-
Brand	Microchip / Microsemi	Microchip / Microsemi	Microchip / Microsemi
DC Collector/Base Gain hfe Min	75 at 1 mA, 10 VDC	75 at 1 mA, 10 VDC	30 at 100 uA, 10 V
Pd Power Dissipation	800 mW	800 mW	3 W
Product Type	BJTs - Bipolar Transistors	BJTs - Bipolar Transistors	BJTs - Bipolar Transistors
Factory Pack Quantity	1	1	1
Subcategory	Transistors	Transistors	Transistors