PartNumber | Jantx2N3506 | JANTX2N3506A | JANTX2N3506AL |
Description | Bipolar Transistors - BJT Power BJT | Bipolar Transistors - BJT Power BJT | Bipolar Transistors - BJT Power BJT |
Manufacturer | Microchip | Microchip | Microchip |
Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
RoHS | N | N | N |
Technology | Si | - | - |
Mounting Style | Through Hole | - | - |
Package / Case | TO-39-3 | - | - |
Transistor Polarity | NPN | - | - |
Configuration | Single | - | - |
Collector Emitter Voltage VCEO Max | 40 V | - | - |
Collector Base Voltage VCBO | 60 V | - | - |
Emitter Base Voltage VEBO | 5 V | - | - |
Collector Emitter Saturation Voltage | 1 V | - | - |
Minimum Operating Temperature | - 65 C | - | - |
Maximum Operating Temperature | + 200 C | - | - |
DC Current Gain hFE Max | 200 | - | - |
Packaging | Bulk | Bulk | Bulk |
Brand | Microchip / Microsemi | Microchip / Microsemi | Microchip / Microsemi |
Continuous Collector Current | 3 A | - | - |
DC Collector/Base Gain hfe Min | 40 | - | - |
Pd Power Dissipation | 1 W | - | - |
Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
Factory Pack Quantity | 1 | 1 | 1 |
Subcategory | Transistors | Transistors | Transistors |