Jantx2N3637 vs Jantx2N3637L vs Jantx2N3637/TR

PartNumber	Jantx2N3637	Jantx2N3637L	Jantx2N3637/TR
Description	Bipolar Transistors - BJT Small-Signal BJT	Bipolar Transistors - BJT Small-Signal BJT	Bipolar Transistors - BJT
Manufacturer	Microchip	Microchip	Microchip
Product Category	Bipolar Transistors - BJT	Bipolar Transistors - BJT	Bipolar Transistors - BJT
RoHS	N	N	N
Technology	Si	-	Si
Mounting Style	Through Hole	-	Through Hole
Package / Case	TO-39-3	-	TO-205AD-3
Transistor Polarity	PNP	-	PNP
Configuration	Single	-	Single
Collector Emitter Voltage VCEO Max	175 V	-	175 V
Collector Base Voltage VCBO	175 V	-	175 V
Emitter Base Voltage VEBO	5 V	-	5 V
Collector Emitter Saturation Voltage	300 mV	-	0.3 V
Maximum DC Collector Current	1 A	-	1 A
Minimum Operating Temperature	- 65 C	-	- 65 C
Maximum Operating Temperature	+ 200 C	-	+ 200 C
Packaging	Bulk	Tray	-
Brand	Microchip / Microsemi	Microchip / Microsemi	Microchip / Microsemi
Pd Power Dissipation	1 W	-	5 W
Product Type	BJTs - Bipolar Transistors	BJTs - Bipolar Transistors	BJTs - Bipolar Transistors
Factory Pack Quantity	1	1	1
Subcategory	Transistors	Transistors	Transistors
DC Current Gain hFE Max	-	-	300 at - 50 mA, - 10 V
DC Collector/Base Gain hfe Min	-	-	55 at 100 uA, 10 V