Jantxv2N2222A vs Jantxv2N2222AL vs Jantxv2N2222A/TR

PartNumber	Jantxv2N2222A	Jantxv2N2222AL	Jantxv2N2222A/TR
Description	Bipolar Transistors - BJT Small-Signal BJT	Bipolar Transistors - BJT Small-Signal BJT	Bipolar Transistors - BJT
Manufacturer	Microchip	Microchip	Microchip
Product Category	Bipolar Transistors - BJT	Bipolar Transistors - BJT	Bipolar Transistors - BJT
RoHS	N	N	N
Technology	Si	-	Si
Mounting Style	Through Hole	-	Through Hole
Package / Case	TO-18-3	-	TO-206AA-3
Transistor Polarity	NPN	-	NPN
Configuration	Single	-	Single
Collector Emitter Voltage VCEO Max	50 V	-	50 V
Collector Base Voltage VCBO	75 V	-	75 V
Emitter Base Voltage VEBO	6 V	-	6 V
Collector Emitter Saturation Voltage	300 mV	-	0.3 V
Maximum DC Collector Current	800 mA	-	800 mA
Minimum Operating Temperature	- 65 C	-	- 65 C
Maximum Operating Temperature	+ 200 C	-	+ 200 C
DC Current Gain hFE Max	325 at 1 mA, 10 VDC	-	325 at 1 mA, 10 V
Packaging	Bulk	Bulk	-
Brand	Microchip / Microsemi	Microchip / Microsemi	Microchip / Microsemi
DC Collector/Base Gain hfe Min	75 at 1 mA, 10 VDC	-	30 at 500 mA, 10 V
Pd Power Dissipation	500 mW	-	0.5 W
Product Type	BJTs - Bipolar Transistors	BJTs - Bipolar Transistors	BJTs - Bipolar Transistors
Factory Pack Quantity	1	1	1
Subcategory	Transistors	Transistors	Transistors