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| PartNumber | KSA1015GRBU | KSA1015-GR | KSA1015-Y |
| Description | Bipolar Transistors - BJT PNP Epitaxial Sil | ||
| Manufacturer | ON Semiconductor | - | - |
| Product Category | Bipolar Transistors - BJT | - | - |
| RoHS | Y | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-92-3 | - | - |
| Transistor Polarity | PNP | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 50 V | - | - |
| Collector Base Voltage VCBO | 50 V | - | - |
| Emitter Base Voltage VEBO | - 5 V | - | - |
| Maximum DC Collector Current | 0.15 A | - | - |
| Gain Bandwidth Product fT | 80 MHz | - | - |
| Minimum Operating Temperature | - 65 C | - | - |
| Maximum Operating Temperature | + 125 C | - | - |
| Series | KSA1015 | - | - |
| DC Current Gain hFE Max | 400 | - | - |
| Height | 4.58 mm | - | - |
| Length | 4.58 mm | - | - |
| Packaging | Bulk | - | - |
| Width | 3.86 mm | - | - |
| Brand | ON Semiconductor / Fairchild | - | - |
| Continuous Collector Current | - 0.15 A | - | - |
| DC Collector/Base Gain hfe Min | 70 | - | - |
| Pd Power Dissipation | 400 mW | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 0.006286 oz | - | - |