KSB1151YSTU vs KSB1151YSTSSTU vs KSB1151YSTSTU

PartNumber	KSB1151YSTU	KSB1151YSTSSTU	KSB1151YSTSTU
Description	Bipolar Transistors - BJT PNP Epitaxial Sil	Bipolar Transistors - BJT PNP Epitaxial Sil	Bipolar Transistors - BJT PNP Epitaxial Sil Short Leads
Manufacturer	ON Semiconductor	ON Semiconductor	ON Semiconductor
Product Category	Bipolar Transistors - BJT	Bipolar Transistors - BJT	Bipolar Transistors - BJT
RoHS	Y	Y	Y
Mounting Style	Through Hole	Through Hole	Through Hole
Package / Case	TO-126-3	TO-126-3	TO-126-3
Transistor Polarity	PNP	PNP	PNP
Configuration	Single	Single	Single
Collector Emitter Voltage VCEO Max	- 60 V	- 60 V	- 60 V
Collector Base Voltage VCBO	- 60 V	- 60 V	- 60 V
Emitter Base Voltage VEBO	- 7 V	- 7 V	- 7 V
Collector Emitter Saturation Voltage	- 0.14 V	- 0.14 V	- 0.14 V
Maximum DC Collector Current	5 A	5 A	5 A
Minimum Operating Temperature	- 55 C	- 55 C	- 55 C
Maximum Operating Temperature	+ 150 C	+ 150 C	+ 150 C
Series	KSB1151	KSB1151	-
DC Current Gain hFE Max	400	400	400
Height	1.5 mm	1.5 mm	1.5 mm
Length	8 mm	8 mm	8 mm
Packaging	Tube	Tube	Tube
Width	3.25 mm	3.25 mm	3.25 mm
Brand	ON Semiconductor / Fairchild	ON Semiconductor / Fairchild	ON Semiconductor / Fairchild
Pd Power Dissipation	20 W	1300 mW	20 W
Product Type	BJTs - Bipolar Transistors	BJTs - Bipolar Transistors	BJTs - Bipolar Transistors
Factory Pack Quantity	1920	60	60
Subcategory	Transistors	Transistors	Transistors
Part # Aliases	KSB1151YSTU_NL	KSB1151YSTSSTU_NL	KSB1151YSTSTU_NL
Unit Weight	0.026843 oz	0.026738 oz	0.026738 oz