KSB1366GTU vs KSB1366G vs KSB1366G,KSB1366

 
PartNumberKSB1366GTUKSB1366GKSB1366G,KSB1366
DescriptionBipolar Transistors - BJT PNP Epitaxial SilBipolar Transistors - BJT PNP Epitaxial Sil
ManufacturerON SemiconductorON Semiconductor-
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJT-
RoHSEE-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-220F-3TO-220F-3-
Transistor PolarityPNPPNP-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max- 60 V- 60 V-
Collector Base Voltage VCBO- 60 V- 60 V-
Emitter Base Voltage VEBO- 7 V- 7 V-
Collector Emitter Saturation Voltage- 0.5 V- 0.5 V-
Maximum DC Collector Current3 A3 A-
Gain Bandwidth Product fT9 MHz9 MHz-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesKSB1366--
DC Current Gain hFE Max320320-
Height9.19 mm9.19 mm-
Length10.16 mm10.16 mm-
PackagingTubeBulk-
Width4.7 mm4.7 mm-
BrandON Semiconductor / FairchildON Semiconductor / Fairchild-
Continuous Collector Current- 3 A- 3 A-
Pd Power Dissipation25 W2000 mW-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
Factory Pack Quantity1000200-
SubcategoryTransistorsTransistors-
Unit Weight0.080072 oz0.080072 oz-
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