KSC1008YBU vs KSC 1008-Y vs KSC1008Y.O

 
PartNumberKSC1008YBUKSC 1008-YKSC1008Y.O
DescriptionBipolar Transistors - BJT NPN Epitaxial Sil
ManufacturerON Semiconductor--
Product CategoryBipolar Transistors - BJT--
RoHSY--
Mounting StyleThrough Hole--
Package / CaseTO-92-3--
Transistor PolarityNPN--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max60 V--
Collector Base Voltage VCBO80 V--
Emitter Base Voltage VEBO8 V--
Collector Emitter Saturation Voltage0.2 V--
Maximum DC Collector Current0.7 A--
Gain Bandwidth Product fT50 MHz--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesKSC1008--
DC Current Gain hFE Max400--
Height4.7 mm--
Length4.7 mm--
PackagingBulk--
Width3.93 mm--
BrandON Semiconductor / Fairchild--
Continuous Collector Current0.7 A--
DC Collector/Base Gain hfe Min40--
Pd Power Dissipation800 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity10000--
SubcategoryTransistors--
Part # AliasesKSC1008YBU_NL--
Unit Weight0.006314 oz--
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