KSC1173OTU vs KSC1173 vs KSC1173-Y/-O

 
PartNumberKSC1173OTUKSC1173KSC1173-Y/-O
DescriptionBipolar Transistors - BJT NPN Epitaxial Sil
ManufacturerON SemiconductorFairchild Semiconductor-
Product CategoryBipolar Transistors - BJTTransistors - Bipolar (BJT) - RF-
RoHSY--
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-220-3--
Transistor PolarityNPNNPN-
ConfigurationSingle--
Collector Emitter Voltage VCEO Max30 V--
Collector Base Voltage VCBO30 V--
Emitter Base Voltage VEBO5 V--
Collector Emitter Saturation Voltage0.3 V0.3 V-
Maximum DC Collector Current3 A--
Gain Bandwidth Product fT100 MHz--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
DC Current Gain hFE Max240240-
Height9.4 mm (Max)--
Length10.1 mm (Max)--
PackagingTube--
Width4.7 mm (Max)--
BrandON Semiconductor / Fairchild--
Continuous Collector Current3 A--
DC Collector/Base Gain hfe Min70--
Pd Power Dissipation10 W--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity50--
SubcategoryTransistors--
Unit Weight0.080072 oz0.080072 oz-
Package Case-TO-220-3-
Pd Power Dissipation-10 W-
Collector Emitter Voltage VCEO Max-30 V-
Collector Base Voltage VCBO-30 V-
Emitter Base Voltage VEBO-5 V-
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