KSC1173YTU vs KSC1173YTSTU vs KSC1173YTSTUA

 
PartNumberKSC1173YTUKSC1173YTSTUKSC1173YTSTUA
DescriptionBipolar Transistors - BJT NPN Epitaxial SilBipolar Transistors - BJT NPN Si Epitaxial Short LeadsBipolar Transistors - BJT
ManufacturerON SemiconductorON SemiconductorFairchild Semiconductor
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJTTransistors - Bipolar (BJT) - RF
RoHSYY-
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-220-3TO-220-3-
Transistor PolarityNPNNPNNPN
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max30 V30 V-
Collector Base Voltage VCBO30 V30 V-
Emitter Base Voltage VEBO5 V5 V-
Collector Emitter Saturation Voltage0.3 V-0.3 V
Maximum DC Collector Current3 A3 A-
Gain Bandwidth Product fT100 MHz100 MHz-
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
SeriesKSC1173--
DC Current Gain hFE Max240-240
Height9.4 mm (Max)9.4 mm (Max)-
Length10.1 mm (Max)10.1 mm (Max)-
PackagingTubeTube-
Width4.7 mm (Max)4.7 mm (Max)-
BrandON Semiconductor / FairchildON Semiconductor / Fairchild-
Continuous Collector Current3 A3 A-
DC Collector/Base Gain hfe Min7070-
Pd Power Dissipation10 W10 W-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
Factory Pack Quantity5050-
SubcategoryTransistorsTransistors-
Unit Weight0.063493 oz0.080072 oz0.080072 oz
Package Case--TO-220-3
Pd Power Dissipation--10 W
Collector Emitter Voltage VCEO Max--30 V
Collector Base Voltage VCBO--30 V
Emitter Base Voltage VEBO--5 V
Top