KSC2001GBU vs KSC2001YBU vs KSC2001

 
PartNumberKSC2001GBUKSC2001YBUKSC2001
DescriptionBipolar Transistors - BJT NPN Epitaxial SilBipolar Transistors - BJT NPN Epitaxial Sil
ManufacturerON SemiconductorON Semiconductor-
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJT-
RoHSYY-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-92-3TO-92-3-
Transistor PolarityNPNNPN-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max25 V25 V-
Collector Base Voltage VCBO30 V30 V-
Emitter Base Voltage VEBO5 V5 V-
Maximum DC Collector Current0.7 A0.7 A-
Gain Bandwidth Product fT170 MHz170 MHz-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
DC Current Gain hFE Max400400-
Height4.58 mm4.58 mm-
Length4.58 mm4.58 mm-
PackagingBulkBulk-
Width3.86 mm3.86 mm-
BrandON Semiconductor / FairchildON Semiconductor / Fairchild-
Continuous Collector Current0.7 A0.7 A-
DC Collector/Base Gain hfe Min9090-
Pd Power Dissipation600 mW600 mW-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
Factory Pack Quantity10001000-
SubcategoryTransistorsTransistors-
Unit Weight0.008466 oz0.008466 oz-
Top