KSC2073H2TSTU vs KSC2073H1TU vs KSC2073H2

PartNumber	KSC2073H2TSTU	KSC2073H1TU	KSC2073H2
Description	Bipolar Transistors - BJT NPN Epitaxial Sil Short Leads	Bipolar Transistors - BJT NPN Epitaxial Sil	TRANS NPN 150V 1.5A TO-220
Manufacturer	ON Semiconductor	ON Semiconductor	FAIRCHILD
Product Category	Bipolar Transistors - BJT	Bipolar Transistors - BJT	Transistors (BJT) - Single
RoHS	Y	Y	-
Mounting Style	Through Hole	Through Hole	Through Hole
Package / Case	TO-220-3	TO-220-3	-
Transistor Polarity	NPN	NPN	NPN
Configuration	Single	Single	Single
Collector Emitter Voltage VCEO Max	150 V	150 V	-
Collector Base Voltage VCBO	150 V	150 V	-
Emitter Base Voltage VEBO	5 V	5 V	-
Collector Emitter Saturation Voltage	1 V	1 V	1 V
Maximum DC Collector Current	1.5 A	1.5 A	1.5 A
Gain Bandwidth Product fT	4 MHz	4 MHz	4 MHz
Minimum Operating Temperature	- 55 C	- 55 C	- 55 C
Maximum Operating Temperature	+ 150 C	+ 150 C	+ 150 C
Series	KSC2073	-	-
DC Current Gain hFE Max	140	140	140
Height	9.4 mm (Max)	9.4 mm (Max)	-
Length	10.1 mm (Max)	10.1 mm (Max)	-
Packaging	Tube	Tube	Tube
Width	4.7 mm (Max)	4.7 mm (Max)	-
Brand	ON Semiconductor / Fairchild	ON Semiconductor / Fairchild	-
Continuous Collector Current	1.5 A	1.5 A	1.5 A
DC Collector/Base Gain hfe Min	40	40	-
Pd Power Dissipation	25 W	25 W	-
Product Type	BJTs - Bipolar Transistors	BJTs - Bipolar Transistors	-
Factory Pack Quantity	50	50	-
Subcategory	Transistors	Transistors	-
Part # Aliases	KSC2073H2TSTU_NL	-	-
Unit Weight	0.063493 oz	0.080072 oz	0.063493 oz
Part Aliases	-	-	KSC2073H2TSTU_NL
Package Case	-	-	TO-220-3
Pd Power Dissipation	-	-	25 W
Collector Emitter Voltage VCEO Max	-	-	150 V
Collector Base Voltage VCBO	-	-	150 V
Emitter Base Voltage VEBO	-	-	5 V
DC Collector Base Gain hfe Min	-	-	40