KSC5603DTU vs KSC5603D vs KSC5603DWTM

 
PartNumberKSC5603DTUKSC5603DKSC5603DWTM
DescriptionBipolar Transistors - BJT NPN Sil Planar SilTRANS NPN 800V 3A TO-220
ManufacturerON Semiconductor--
Product CategoryBipolar Transistors - BJT--
RoHSY--
Mounting StyleThrough Hole--
Package / CaseTO-220-3--
Transistor PolarityNPN--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max800 V--
Collector Base Voltage VCBO1.6 kV--
Emitter Base Voltage VEBO12 V--
Collector Emitter Saturation Voltage0.5 V--
Maximum DC Collector Current3 A--
Gain Bandwidth Product fT5 MHz--
Minimum Operating Temperature- 65 C--
Maximum Operating Temperature+ 150 C--
SeriesKSC5603D--
DC Current Gain hFE Max35--
Height9.4 mm--
Length10.1 mm--
PackagingTube--
Width4.7 mm--
BrandON Semiconductor / Fairchild--
Continuous Collector Current3 A--
DC Collector/Base Gain hfe Min20--
Pd Power Dissipation100 W--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity1000--
SubcategoryTransistors--
Part # AliasesKSC5603DTU_NL--
Unit Weight0.063493 oz--
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