KSC815YBU vs KSC815YTA vs KSC815-Y

 
PartNumberKSC815YBUKSC815YTAKSC815-Y
DescriptionBipolar Transistors - BJT NPN Epitaxial SilBipolar Transistors - BJT NPN Epitaxial Transisto
ManufacturerON SemiconductorFairchild SemiconductorFSC
Product CategoryBipolar Transistors - BJTTransistors (BJT) - Single, Pre-BiasedTransistors (BJT) - Single
RoHSY--
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-92-3--
Transistor PolarityNPNNPN-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max45 V--
Collector Base Voltage VCBO60 V--
Emitter Base Voltage VEBO5 V--
Collector Emitter Saturation Voltage0.15 V0.15 V-
Maximum DC Collector Current0.2 A0.2 A-
Gain Bandwidth Product fT200 MHz200 MHz-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
DC Current Gain hFE Max400400-
Height5.33 mm--
Length5.2 mm--
PackagingBulkCut Tape (CT) Alternate Packaging-
Width4.19 mm--
BrandON Semiconductor / Fairchild--
Continuous Collector Current0.2 A0.2 A-
DC Collector/Base Gain hfe Min40--
Pd Power Dissipation400 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity1000--
SubcategoryTransistors--
Unit Weight0.008466 oz0.008466 oz-
Series---
Part Aliases-KSC815YTA_NL-
Package Case-TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)-
Mounting Type-Through Hole-
Supplier Device Package-TO-92-3-
Power Max-400mW-
Transistor Type-NPN-
Current Collector Ic Max-200mA-
Voltage Collector Emitter Breakdown Max-45V-
DC Current Gain hFE Min Ic Vce-120 @ 50mA, 1V-
Vce Saturation Max Ib Ic-400mV @ 15mA, 150mA-
Current Collector Cutoff Max-100nA (ICBO)-
Frequency Transition-200MHz-
Pd Power Dissipation-0.4 W-
Collector Emitter Voltage VCEO Max-45 V-
Collector Base Voltage VCBO-60 V-
Emitter Base Voltage VEBO-5 V-
DC Collector Base Gain hfe Min-40-
Top