KSE182STU vs KSE182PWD vs KSE182

 
PartNumberKSE182STUKSE182PWDKSE182
DescriptionBipolar Transistors - BJT NPN Epitaxial SilTRANSISTOR NPN 80V DIP
ManufacturerON Semiconductor-FSC
Product CategoryBipolar Transistors - BJT-Transistors (BJT) - Single
RoHSY--
Mounting StyleThrough Hole--
Package / CaseTO-126-3--
Transistor PolarityNPN--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max80 V--
Collector Base Voltage VCBO100 V--
Emitter Base Voltage VEBO7 V--
Maximum DC Collector Current3 A--
Gain Bandwidth Product fT50 MHz--
Minimum Operating Temperature- 65 C--
Maximum Operating Temperature+ 150 C--
DC Current Gain hFE Max250--
Height11 mm--
Length8 mm--
PackagingTube--
Width3.25 mm--
BrandON Semiconductor / Fairchild--
Continuous Collector Current3 A--
DC Collector/Base Gain hfe Min50--
Pd Power Dissipation1.5 W--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity60--
SubcategoryTransistors--
Unit Weight0.026843 oz--
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