KSE2955T vs KSE2955 vs KSE2955T-TU

 
PartNumberKSE2955TKSE2955KSE2955T-TU
DescriptionBipolar Transistors - BJT PNP Silicon
ManufacturerON Semiconductor--
Product CategoryBipolar Transistors - BJT--
RoHSY--
Mounting StyleThrough Hole--
Package / CaseTO-220-3--
Transistor PolarityPNP--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max- 60 V--
Collector Base Voltage VCBO- 70 V--
Emitter Base Voltage VEBO- 5 V--
Maximum DC Collector Current10 A--
Gain Bandwidth Product fT2 MHz--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
DC Current Gain hFE Max100--
Height9.4 mm--
Length10.1 mm--
PackagingBulk--
Width4.7 mm--
BrandON Semiconductor / Fairchild--
Continuous Collector Current- 10 A--
DC Collector/Base Gain hfe Min20--
Pd Power Dissipation75 W--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity200--
SubcategoryTransistors--
Part # AliasesKSE2955T_NL--
Unit Weight0.080072 oz--
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