KSP2222ATA vs KSP2222ATA_Q vs KSP2222ATF

 
PartNumberKSP2222ATAKSP2222ATA_QKSP2222ATF
DescriptionBipolar Transistors - BJT NPN Si Transistor EpitaxialBipolar Transistors - BJT NPN Si Transistor EpitaxialBipolar Transistors - BJT NPN Si Transistor Epitaxial
ManufacturerON Semiconductor-Fairchild Semiconductor
Product CategoryBipolar Transistors - BJT-Transistors (BJT) - Single, Pre-Biased
RoHSY--
Mounting StyleThrough Hole-Through Hole
Package / CaseTO-92-3 Kinked Lead--
Transistor PolarityNPN-NPN
ConfigurationSingle-Single
Collector Emitter Voltage VCEO Max40 V--
Collector Base Voltage VCBO75 V--
Emitter Base Voltage VEBO6 V--
Collector Emitter Saturation Voltage1 V-1 V
Maximum DC Collector Current0.6 A-0.6 A
Gain Bandwidth Product fT300 MHz-300 MHz
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 150 C-+ 150 C
SeriesKSP2222A--
DC Current Gain hFE Max300-300
Height4.7 mm--
Length4.7 mm--
PackagingAmmo Pack-Cut Tape (CT) Alternate Packaging
Width3.93 mm--
BrandON Semiconductor / Fairchild--
Continuous Collector Current0.6 A-0.6 A
Pd Power Dissipation625 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity2000--
SubcategoryTransistors--
Part # AliasesKSP2222ATA_NL--
Unit Weight0.008466 oz-0.008466 oz
Package Case--TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Mounting Type--Through Hole
Supplier Device Package--TO-92-3
Power Max--625mW
Transistor Type--NPN
Current Collector Ic Max--600mA
Voltage Collector Emitter Breakdown Max--40V
DC Current Gain hFE Min Ic Vce--100 @ 150mA, 10mV
Vce Saturation Max Ib Ic--1V @ 50mA, 500mA
Current Collector Cutoff Max--10nA (ICBO)
Frequency Transition--300MHz
Pd Power Dissipation--625 mW
Collector Emitter Voltage VCEO Max--40 V
Collector Base Voltage VCBO--75 V
Emitter Base Voltage VEBO--6 V
DC Collector Base Gain hfe Min--100
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