KSP45BU vs KSP45TA vs KSP45

 
PartNumberKSP45BUKSP45TAKSP45
DescriptionBipolar Transistors - BJT NPN Si Transistor EpitaxialBipolar Transistors - BJT NPN Si Transistor Epitaxial
ManufacturerON SemiconductorFairchild-
Product CategoryBipolar Transistors - BJTTransistors (BJT) - Single-
RoHSY--
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-92-3--
Transistor PolarityNPNNPN-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max350 V--
Collector Base Voltage VCBO400 V--
Emitter Base Voltage VEBO6 V--
Collector Emitter Saturation Voltage0.75 V0.75 V-
Maximum DC Collector Current0.3 A0.3 A-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesKSP45--
DC Current Gain hFE Max200200-
Height4.7 mm--
Length4.7 mm--
PackagingBulkAmmo Pack-
Width3.93 mm--
BrandON Semiconductor / Fairchild--
Continuous Collector Current0.3 A0.3 A-
DC Collector/Base Gain hfe Min50--
Pd Power Dissipation625 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity1000--
SubcategoryTransistors--
Unit Weight0.006286 oz0.008466 oz-
Part Aliases-KSP45TA_NL-
Package Case-TO-92-3 Kinked Lead-
Pd Power Dissipation-625 mW-
Collector Emitter Voltage VCEO Max-350 V-
Collector Base Voltage VCBO-400 V-
Emitter Base Voltage VEBO-6 V-
DC Collector Base Gain hfe Min-50-
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