MG12100D-BA1MM vs MG1210 vs MG12100H-XN2MM

 
PartNumberMG12100D-BA1MMMG1210MG12100H-XN2MM
DescriptionIGBT Modules 1200V 100A Dual
ManufacturerLittelfuse--
Product CategoryIGBT Modules--
RoHSY--
ProductIGBT Silicon Modules--
ConfigurationDual--
Collector Emitter Voltage VCEO Max1200 V--
Collector Emitter Saturation Voltage1.8 V--
Continuous Collector Current at 25 C160 A--
Gate Emitter Leakage Current400 nA--
Pd Power Dissipation1000 W--
Package / CasePackage D--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 150 C--
PackagingBulk--
SeriesMG12100D--
BrandLittelfuse--
Mounting StyleChassis Mount--
Maximum Gate Emitter Voltage20 V--
Product TypeIGBT Modules--
Factory Pack Quantity60--
SubcategoryIGBTs--
Unit Weight10.053079 oz--
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