MID100-12A3 vs MID112 vs MID112(DPAK)

 
PartNumberMID100-12A3MID112MID112(DPAK)
DescriptionIGBT Modules 100 Amps 1200V
ManufacturerIXYS--
Product CategoryIGBT Modules--
RoHSY--
ProductIGBT Silicon Modules--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max1.2 kV--
Continuous Collector Current at 25 C135 A--
Gate Emitter Leakage Current300 nA--
Pd Power Dissipation560 W--
Package / CaseY4-M5-7--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 125 C--
PackagingBulk--
Height30 mm--
Length94 mm--
SeriesMID100--
Width34 mm--
BrandIXYS--
Mounting StyleChassis Mount--
Maximum Gate Emitter Voltage20 V--
Product TypeIGBT Modules--
Factory Pack Quantity6--
SubcategoryIGBTs--
Unit Weight3.562670 oz--
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