PartNumber | MJD122-1 | MJD122-1G/MJD127 | MJD122-1G |
Description | Darlington Transistors NPN PWR Darlington Int Anti Collector | ||
Manufacturer | STMicroelectronics | ON/FAI | ON/FAI |
Product Category | Darlington Transistors | IC Chips | IC Chips |
Configuration | Single | - | - |
Transistor Polarity | NPN | - | - |
Collector Emitter Voltage VCEO Max | 100 V | - | - |
Emitter Base Voltage VEBO | 5 V | - | - |
Collector Base Voltage VCBO | 100 V | - | - |
Maximum DC Collector Current | 5 A | - | - |
Maximum Collector Cut off Current | 10 uA | - | - |
Pd Power Dissipation | 20 W | - | - |
Mounting Style | Through Hole | - | - |
Package / Case | TO-252-2 | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Series | MJD122 | - | - |
Packaging | Tube | - | - |
DC Current Gain hFE Max | 12000 | - | - |
Height | 7.2 mm | - | - |
Length | 6.6 mm | - | - |
Width | 2.4 mm | - | - |
Brand | STMicroelectronics | - | - |
DC Collector/Base Gain hfe Min | 100 | - | - |
Product Type | Darlington Transistors | - | - |
Factory Pack Quantity | 3000 | - | - |
Subcategory | Transistors | - | - |
Unit Weight | 0.011993 oz | - | - |