MJD31C vs MJD31C,MJD32C vs MJD31C-1

 
PartNumberMJD31CMJD31C,MJD32CMJD31C-1
DescriptionBipolar Transistors - BJT NPN Gen Pur SwitchBipolar Junction Transistor, NPN Type, TO-252VAR
ManufacturerSTMicroelectronics-DIODES
Product CategoryBipolar Transistors - BJT-Transistors (BJT) - Single
RoHSY--
Mounting StyleSMD/SMT-SMD/SMT
Package / CaseTO-252-3--
Transistor PolarityNPN-NPN
ConfigurationSingle-Single
Collector Emitter Voltage VCEO Max100 V--
Collector Base Voltage VCBO100 V--
Emitter Base Voltage VEBO5 V--
Maximum DC Collector Current3 A-3 A
Minimum Operating Temperature- 65 C-- 55 C
Maximum Operating Temperature+ 150 C-+ 150 C
SeriesMJD31C-MJD31C
Height2.4 mm (Max)--
Length6.6 mm (Max)--
PackagingTube-Reel
Width6.2 mm (Max)--
BrandSTMicroelectronics--
Continuous Collector Current3 A-3 A
DC Collector/Base Gain hfe Min20--
Pd Power Dissipation15 W--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity75--
SubcategoryTransistors--
Unit Weight0.063493 oz-0.012346 oz
Package Case--DPAK-3
Pd Power Dissipation--1560 mW
Collector Emitter Voltage VCEO Max--100 V
Collector Emitter Saturation Voltage--1.2 V
Collector Base Voltage VCBO--100 V
Emitter Base Voltage VEBO--5 V
Gain Bandwidth Product fT--3 MHz
DC Collector Base Gain hfe Min--25
DC Current Gain hFE Max--40 at 3 A at 4 V
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