PartNumber | MJD31C | MJD31C,MJD32C | MJD31C-1 |
Description | Bipolar Transistors - BJT NPN Gen Pur Switch | Bipolar Junction Transistor, NPN Type, TO-252VAR | |
Manufacturer | STMicroelectronics | - | DIODES |
Product Category | Bipolar Transistors - BJT | - | Transistors (BJT) - Single |
RoHS | Y | - | - |
Mounting Style | SMD/SMT | - | SMD/SMT |
Package / Case | TO-252-3 | - | - |
Transistor Polarity | NPN | - | NPN |
Configuration | Single | - | Single |
Collector Emitter Voltage VCEO Max | 100 V | - | - |
Collector Base Voltage VCBO | 100 V | - | - |
Emitter Base Voltage VEBO | 5 V | - | - |
Maximum DC Collector Current | 3 A | - | 3 A |
Minimum Operating Temperature | - 65 C | - | - 55 C |
Maximum Operating Temperature | + 150 C | - | + 150 C |
Series | MJD31C | - | MJD31C |
Height | 2.4 mm (Max) | - | - |
Length | 6.6 mm (Max) | - | - |
Packaging | Tube | - | Reel |
Width | 6.2 mm (Max) | - | - |
Brand | STMicroelectronics | - | - |
Continuous Collector Current | 3 A | - | 3 A |
DC Collector/Base Gain hfe Min | 20 | - | - |
Pd Power Dissipation | 15 W | - | - |
Product Type | BJTs - Bipolar Transistors | - | - |
Factory Pack Quantity | 75 | - | - |
Subcategory | Transistors | - | - |
Unit Weight | 0.063493 oz | - | 0.012346 oz |
Package Case | - | - | DPAK-3 |
Pd Power Dissipation | - | - | 1560 mW |
Collector Emitter Voltage VCEO Max | - | - | 100 V |
Collector Emitter Saturation Voltage | - | - | 1.2 V |
Collector Base Voltage VCBO | - | - | 100 V |
Emitter Base Voltage VEBO | - | - | 5 V |
Gain Bandwidth Product fT | - | - | 3 MHz |
DC Collector Base Gain hfe Min | - | - | 25 |
DC Current Gain hFE Max | - | - | 40 at 3 A at 4 V |