MJD31C-13 vs MJD31C-1 vs MJD31C-13-CUT TAPE

 
PartNumberMJD31C-13MJD31C-1MJD31C-13-CUT TAPE
DescriptionBipolar Transistors - BJT 100V 5A NPN SMTBipolar Junction Transistor, NPN Type, TO-252VAR
ManufacturerDiodes IncorporatedDIODES-
Product CategoryBipolar Transistors - BJTTransistors (BJT) - Single-
RoHSY--
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseDPAK-3--
Transistor PolarityNPNNPN-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max100 V--
Collector Base Voltage VCBO100 V--
Emitter Base Voltage VEBO5 V--
Collector Emitter Saturation Voltage1.2 V1.2 V-
Maximum DC Collector Current3 A3 A-
Gain Bandwidth Product fT3 MHz3 MHz-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesMJD31CMJD31C-
DC Current Gain hFE Max40 at 3 A, 4 V40 at 3 A at 4 V-
Height2.4 mm--
Length6.8 mm--
PackagingReelReel-
Width6.2 mm--
BrandDiodes Incorporated--
Continuous Collector Current3 A3 A-
DC Collector/Base Gain hfe Min25--
Pd Power Dissipation1560 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity2500--
SubcategoryTransistors--
Unit Weight0.012346 oz0.012346 oz-
Package Case-DPAK-3-
Pd Power Dissipation-1560 mW-
Collector Emitter Voltage VCEO Max-100 V-
Collector Base Voltage VCBO-100 V-
Emitter Base Voltage VEBO-5 V-
DC Collector Base Gain hfe Min-25-
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