MJD32CT4-A vs MJD32CT4G vs MJD32CT4

 
PartNumberMJD32CT4-AMJD32CT4GMJD32CT4
DescriptionBipolar Transistors - BJT LO PWR PNP PW TRANSBipolar Transistors - BJT 3A 100V 15W PNPBipolar Transistors - BJT PNP Gen Pur Switch
ManufacturerSTMicroelectronicsON SemiconductorSTMicroelectronics
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJTBipolar Transistors - BJT
RoHSYYY
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseTO-252-3TO-252-3TO-252-3
Transistor PolarityPNPPNPPNP
ConfigurationSingleSingleSingle
Collector Emitter Voltage VCEO Max100 V100 V100 V
Collector Base Voltage VCBO100 V100 V100 V
Emitter Base Voltage VEBO5 V5 V5 V
Maximum DC Collector Current3 A3 A3 A
Minimum Operating Temperature- 65 C- 65 C- 65 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
SeriesMJD32CT4-AMJD32CMJD32C
Height2.4 mm (Max)2.38 mm2.4 mm
Length6.6 mm (Max)6.73 mm6.6 mm
PackagingReelReelReel
Width6.2 mm (Max)6.22 mm6.2 mm
BrandSTMicroelectronicsON Semiconductor / FairchildSTMicroelectronics
Pd Power Dissipation15000 mW1.56 W15 W
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar TransistorsBJTs - Bipolar Transistors
QualificationAEC-Q101--
Factory Pack Quantity250025002500
SubcategoryTransistorsTransistorsTransistors
Unit Weight0.063493 oz0.035274 oz0.063493 oz
Collector Emitter Saturation Voltage-1.2 V- 1.2 V
Gain Bandwidth Product fT-3 MHz-
Continuous Collector Current-3 A3 A
DC Collector/Base Gain hfe Min-2520
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