MJE2955T vs MJE2955T,MJE2955,2955T,2 vs MJE2955T,MJE2955,2955T,2955

 
PartNumberMJE2955TMJE2955T,MJE2955,2955T,2MJE2955T,MJE2955,2955T,2955
DescriptionBipolar Transistors - BJT PNP Gen Pur Switch
ManufacturerSTMicroelectronics--
Product CategoryBipolar Transistors - BJT--
RoHSY--
Mounting StyleThrough Hole--
Package / CaseTO-220-3--
Transistor PolarityPNP--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max60 V--
Collector Base Voltage VCBO70 V--
Emitter Base Voltage VEBO5 V--
Collector Emitter Saturation Voltage1.1 V--
Maximum DC Collector Current10 A--
Gain Bandwidth Product fT2 MHz--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesMJE2955T--
DC Current Gain hFE Max70--
Height9.15 mm--
Length10.4 mm--
Width4.6 mm--
BrandSTMicroelectronics--
Continuous Collector Current10 A--
DC Collector/Base Gain hfe Min20--
Pd Power Dissipation75 W--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity1000--
SubcategoryTransistors--
Unit Weight0.211644 oz--
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