MJE350 vs MJE350 MJE340 vs MJE350 NO BRAND MARKING

 
PartNumberMJE350MJE350 MJE340MJE350 NO BRAND MARKING
DescriptionBipolar Transistors - BJT PNP Medium Power
ManufacturerSTMicroelectronics--
Product CategoryBipolar Transistors - BJT--
RoHSY--
Mounting StyleThrough Hole--
Package / CaseSOT-32-3--
Transistor PolarityPNP--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max300 V--
Collector Base Voltage VCBO3 V--
Emitter Base Voltage VEBO3 V--
Collector Emitter Saturation Voltage0.5 V--
Maximum DC Collector Current0.5 A--
Minimum Operating Temperature- 65 C--
Maximum Operating Temperature+ 150 C--
SeriesMJE350--
DC Current Gain hFE Max240--
Height10.8 mm--
Length7.8 mm--
Width2.7 mm--
BrandSTMicroelectronics--
Continuous Collector Current0.5 A--
DC Collector/Base Gain hfe Min30--
Pd Power Dissipation20.8 W--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity2000--
SubcategoryTransistors--
Unit Weight0.002116 oz--
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