MKI50-06A7T vs MKI50-06A7 vs MKI50-12 E7

 
PartNumberMKI50-06A7TMKI50-06A7MKI50-12 E7
DescriptionDiscrete Semiconductor Modules 50 Amps 600VIGBT Modules 50 Amps 600V
ManufacturerIXYSIXYS-
Product CategoryDiscrete Semiconductor ModulesIGBT Modules-
RoHSYY-
SeriesMKI50MKI50-
PackagingBulkBulk-
BrandIXYSIXYS-
Product TypeDiscrete Semiconductor ModulesIGBT Modules-
Factory Pack Quantity66-
SubcategoryDiscrete Semiconductor ModulesIGBTs-
Product-IGBT Silicon Modules-
Configuration-Quad-
Collector Emitter Voltage VCEO Max-600 V-
Collector Emitter Saturation Voltage-600 V-
Continuous Collector Current at 25 C-72 A-
Gate Emitter Leakage Current-200 nA-
Pd Power Dissipation-225 W-
Package / Case-E2-12-
Minimum Operating Temperature-- 40 C-
Maximum Operating Temperature-+ 150 C-
Height-17 mm-
Length-107.5 mm-
Width-45 mm-
Mounting Style-Chassis Mount-
Maximum Gate Emitter Voltage-20 V-
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