MMBT2222AT vs MMBT2222AT-7 vs MMBT2222AT-7 , MAX810LXR

 
PartNumberMMBT2222ATMMBT2222AT-7MMBT2222AT-7 , MAX810LXR
DescriptionBipolar Transistors - BJT NPN GENERAL PURPOSE AMPLIFIERBipolar Transistors - BJT 40V 150mW
ManufacturerON SemiconductorDiodes Incorporated-
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJT-
RoHSYN-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-523F-3SOT-523-3-
Transistor PolarityNPNNPN-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max40 V40 V-
Collector Base Voltage VCBO75 V75 V-
Emitter Base Voltage VEBO6 V6 V-
Maximum DC Collector Current0.6 A0.6 A-
Gain Bandwidth Product fT300 MHz300 MHz-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesMMBT2222ATMMBT2222A-
Height0.78 mm0.75 mm-
Length1.7 mm1.6 mm-
PackagingReel--
Width0.98 mm0.8 mm-
BrandON Semiconductor / FairchildDiodes Incorporated-
Pd Power Dissipation250 mW150 mW-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
Factory Pack Quantity30003000-
SubcategoryTransistorsTransistors-
Unit Weight0.001058 oz0.000071 oz-
DC Current Gain hFE Max-375-
Continuous Collector Current-0.6 A-
DC Collector/Base Gain hfe Min-75-
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