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| PartNumber | MMBT5551 | MMBT5551 G1 | MMBT5551 SOT23 |
| Description | Bipolar Transistors - BJT SOT-23 NPN GEN PUR | ||
| Manufacturer | ON Semiconductor | - | - |
| Product Category | Bipolar Transistors - BJT | - | - |
| RoHS | Y | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-23-3 | - | - |
| Transistor Polarity | NPN | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 160 V | - | - |
| Collector Base Voltage VCBO | 180 V | - | - |
| Emitter Base Voltage VEBO | 6 V | - | - |
| Collector Emitter Saturation Voltage | 0.2 V | - | - |
| Maximum DC Collector Current | 0.6 A | - | - |
| Gain Bandwidth Product fT | 300 MHz | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | MMBT5551 | - | - |
| DC Current Gain hFE Max | 250 | - | - |
| Height | 0.93 mm | - | - |
| Length | 2.92 mm | - | - |
| Packaging | Reel | - | - |
| Width | 1.3 mm | - | - |
| Brand | ON Semiconductor / Fairchild | - | - |
| Continuous Collector Current | 0.6 A | - | - |
| DC Collector/Base Gain hfe Min | 80 | - | - |
| Pd Power Dissipation | 350 mW | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | Transistors | - | - |
| Part # Aliases | MMBT5551_NL | - | - |
| Unit Weight | 0.000282 oz | - | - |