MMBTA05 vs MMBTA05 1H 1GM vs MMBTA05 RU

 
PartNumberMMBTA05MMBTA05 1H 1GMMMBTA05 RU
DescriptionBipolar Transistors - BJT NPN Transistor General PurposeBipolar Transistors - BJT NPN transistor 500mA / 60V / 300mW
ManufacturerON Semiconductor-Taiwan Semiconductor
Product CategoryBipolar Transistors - BJT-Transistors - Bipolar (BJT) - RF
RoHSY--
Mounting StyleSMD/SMT-SMD/SMT
Package / CaseSOT-23-3--
Transistor PolarityNPN-NPN
ConfigurationSingle--
Collector Emitter Voltage VCEO Max60 V--
Collector Base Voltage VCBO60 V--
Emitter Base Voltage VEBO4 V--
Collector Emitter Saturation Voltage0.25 V--
Maximum DC Collector Current0.5 A--
Gain Bandwidth Product fT100 MHz--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesMMBTA05--
Height0.93 mm--
Length2.92 mm--
PackagingReel-Reel
Width1.3 mm--
BrandON Semiconductor / Fairchild--
Continuous Collector Current0.5 A--
DC Collector/Base Gain hfe Min50--
Pd Power Dissipation350 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity3000--
SubcategoryTransistors--
Unit Weight0.000282 oz-0.050717 oz
Package Case--SOT-23-3
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