PartNumber | MMBTA42 | MMBTA42 1D | MMBTA42 100-200 1D |
Description | Bipolar Transistors - BJT | ||
Manufacturer | NXP | - | - |
Product Category | Bipolar Transistors - BJT | - | - |
Transistor Polarity | NPN | - | - |
Configuration | Single | - | - |
Collector Emitter Voltage VCEO Max | 300 V | - | - |
Collector Base Voltage VCBO | 300 V | - | - |
Emitter Base Voltage VEBO | 6 V | - | - |
Maximum DC Collector Current | 0.5 A | - | - |
Gain Bandwidth Product fT | 50 MHz | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Brand | NXP Semiconductors | - | - |
DC Collector/Base Gain hfe Min | 25 at 1 mA, 10 V | - | - |
Pd Power Dissipation | 240 mW | - | - |
Product Type | BJTs - Bipolar Transistors | - | - |
Subcategory | Transistors | - | - |