MMBTH103EM vs MMBTH10 3E vs MMBTH10

 
PartNumberMMBTH103EMMMBTH10 3EMMBTH10
DescriptionRF TRANS NPN 25V 650MHZ SOT23-3
Manufacturer-ON
Product Category-IC ChipsRF Transistors (BJT)
Series---
Packaging--Digi-ReelR Alternate Packaging
Part Aliases--MMBTH10_NL
Unit Weight--0.002116 oz
Mounting Style--SMD/SMT
Package Case--TO-236-3, SC-59, SOT-23-3
Technology--Si
Mounting Type--Surface Mount
Supplier Device Package--SOT-23-3 (TO-236)
Configuration--Single
Power Max--225mW
Transistor Type--NPN
Current Collector Ic Max--50mA
Voltage Collector Emitter Breakdown Max--25V
DC Current Gain hFE Min Ic Vce--60 @ 4mA, 10V
Frequency Transition--650MHz
Noise Figure dB Typ f---
Gain---
Pd Power Dissipation--225 mW
Maximum Operating Temperature--+ 150 C
Minimum Operating Temperature--- 55 C
Operating Frequency--650 MHz
Collector Emitter Voltage VCEO Max--25 V
Transistor Polarity--NPN
Emitter Base Voltage VEBO--3 V
Maximum DC Collector Current--0.05 A
Continuous Collector Current--0.05 A
DC Collector Base Gain hfe Min--60
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