MMDT4126-7-F vs MMDT4126-7 vs MMDT4126

 
PartNumberMMDT4126-7-FMMDT4126-7MMDT4126
DescriptionBipolar Transistors - BJT -25V 200mWBipolar Transistors - BJT -25V 200mW
ManufacturerDiodes IncorporatedDiodes Incorporated-
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJT-
RoHSYN-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-363-6SOT-363-6-
Transistor PolarityPNPPNP-
ConfigurationDualDual-
Collector Emitter Voltage VCEO Max- 25 V- 25 V-
Collector Base Voltage VCBO- 25 V- 25 V-
Emitter Base Voltage VEBO- 4 V- 4 V-
Collector Emitter Saturation Voltage- 0.4 V- 0.4 V-
Maximum DC Collector Current0.2 A0.2 A-
Gain Bandwidth Product fT250 MHz250 MHz-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesMMDT41MMDT4126-
DC Current Gain hFE Max300300-
Height1 mm1 mm-
Length2.2 mm2.2 mm-
PackagingReelReel-
Width1.35 mm1.35 mm-
BrandDiodes IncorporatedDiodes Incorporated-
Continuous Collector Current- 0.2 A- 0.2 A-
Pd Power Dissipation200 mW200 mW-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
Factory Pack Quantity30003000-
SubcategoryTransistorsTransistors-
Unit Weight0.000212 oz0.000212 oz-
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