MMST5401-7-F vs MMST5401-7 vs MMST5401

 
PartNumberMMST5401-7-FMMST5401-7MMST5401
DescriptionBipolar Transistors - BJT PNP BIPOLARBipolar Transistors - BJT PNP BIPOLAR
ManufacturerDiodes IncorporatedDiodes Incorporated-
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJT-
RoHSYN-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-323-3SOT-323-3-
Transistor PolarityPNPPNP-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max150 V150 V-
Collector Base Voltage VCBO160 V160 V-
Emitter Base Voltage VEBO5 V5 V-
Collector Emitter Saturation Voltage200 mV200 mV-
Maximum DC Collector Current200 mA200 mA-
Gain Bandwidth Product fT300 MHz300 MHz-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesMMST5401MMST5401-
DC Current Gain hFE Max240240-
Height1 mm1 mm-
Length2.2 mm2.2 mm-
PackagingReelReel-
Width1.35 mm1.35 mm-
BrandDiodes IncorporatedDiodes Incorporated-
Continuous Collector Current200 mA200 mA-
DC Collector/Base Gain hfe Min5050-
Pd Power Dissipation200 mW200 mW-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
Factory Pack Quantity30003000-
SubcategoryTransistorsTransistors-
Unit Weight0.000176 oz0.000176 oz-
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