 | |  | |
| PartNumber | MMST5551-7-F | MMST5551-7 | MMST5551 |
| Description | Bipolar Transistors - BJT NPN BIPOLAR | Bipolar Transistors - BJT NPN BIPOLAR | |
| Manufacturer | Diodes Incorporated | Diodes Incorporated | - |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | - |
| RoHS | Y | N | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SOT-323-3 | SOT-323-3 | - |
| Transistor Polarity | NPN | NPN | - |
| Configuration | Single | Single | - |
| Collector Emitter Voltage VCEO Max | 160 V | 160 V | - |
| Collector Base Voltage VCBO | 180 V | 180 V | - |
| Emitter Base Voltage VEBO | 6 V | 6 V | - |
| Collector Emitter Saturation Voltage | 150 mV | 150 mV | - |
| Maximum DC Collector Current | 200 mA | 200 mA | - |
| Gain Bandwidth Product fT | 300 MHz | 300 MHz | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Series | MMST5551 | MMST5551 | - |
| DC Current Gain hFE Max | 250 | 250 | - |
| Height | 1 mm | 1 mm | - |
| Length | 2.2 mm | 2.2 mm | - |
| Packaging | Reel | Reel | - |
| Width | 1.35 mm | 1.35 mm | - |
| Brand | Diodes Incorporated | Diodes Incorporated | - |
| Continuous Collector Current | 200 mA | 200 mA | - |
| DC Collector/Base Gain hfe Min | 30 | 30 | - |
| Pd Power Dissipation | 200 mW | 200 mW | - |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | - |
| Factory Pack Quantity | 3000 | 3000 | - |
| Subcategory | Transistors | Transistors | - |
| Unit Weight | 0.000176 oz | 0.000176 oz | - |