MPS6519 vs MPS6519 PBFREE vs MPS6519EBCI

 
PartNumberMPS6519MPS6519 PBFREEMPS6519EBCI
DescriptionBipolar Transistors - BJT PNP Gen Pur SSBipolar Transistors - BJT PNP 25Vcbo 25Vceo 4.0Vebo 100mA 625mW
ManufacturerCentral SemiconductorCentral Semiconductor-
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJT-
RoHSNY-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-92-3TO-92-3-
Transistor PolarityPNPNPN, PNP-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max25 V25 V-
Collector Base Voltage VCBO25 V25 V-
Emitter Base Voltage VEBO4 V4 V-
Collector Emitter Saturation Voltage500 mV0.5 V-
Maximum DC Collector Current100 mA--
Minimum Operating Temperature- 65 C- 65 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesMPS65MPS65-
DC Current Gain hFE Max250 at 2 mA, 10 V500 at 2 mA, 10 V-
Height5.33 mm--
Length5.21 mm--
PackagingBulkBulk-
Width4.19 mm--
BrandCentral SemiconductorCentral Semiconductor-
Continuous Collector Current0.2 A100 mA-
DC Collector/Base Gain hfe Min150 at 100 mA, 10 V250 at 2 mA, 10 V-
Pd Power Dissipation625 mW1.5 W-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
Factory Pack Quantity25002500-
SubcategoryTransistorsTransistors-
Part # AliasesMPS6519 TIN/LEAD--
Unit Weight0.016000 oz--
Technology-Si-
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