MRF1K50GNR5 vs MRF1K50H-TF2 vs MRF1K50H-TF1

PartNumber	MRF1K50GNR5	MRF1K50H-TF2	MRF1K50H-TF1
Description	RF MOSFET Transistors Wideband RF Power LDMOS Transistors, 1.8-500 MHz, 1500 W CW, 50 V	RF MOSFET Transistors MRF1K50H 27 MHz Reference Circuit	RF MOSFET Transistors MRF1K50H 87.5-108 MHz Reference Circuit
Manufacturer	NXP	NXP	NXP
Product Category	RF MOSFET Transistors	RF MOSFET Transistors	RF MOSFET Transistors
RoHS	Y	E	E
Transistor Polarity	N-Channel	Dual N-Channel	Dual N-Channel
Technology	Si	Si	Si
Id Continuous Drain Current	36 A	36 A	36 A
Vds Drain Source Breakdown Voltage	133 V	135 V	135 V
Gain	23 dB	23.7 dB	23.7 dB
Output Power	1.5 kW	1.5 kW	1.5 kW
Minimum Operating Temperature	- 40 C	- 40 C	- 40 C
Maximum Operating Temperature	+ 150 C	+ 150 C	+ 150 C
Mounting Style	SMD/SMT	SMD/SMT	SMD/SMT
Package / Case	OM-1230G-4L	NI-1230H-4S	NI-1230H-4S
Packaging	Reel	-	-
Operating Frequency	1.8 MHz to 500 MHz	1.8 MHz to 500 MHz	1.8 MHz to 500 MHz
Type	RF Power MOSFET	RF Power MOSFET	RF Power MOSFET
Brand	NXP / Freescale	NXP / Freescale	NXP / Freescale
Forward Transconductance Min	33.5 S	33.5 S	33.5 S
Number of Channels	2 Channel	2 Channel	2 Channel
Moisture Sensitive	Yes	-	-
Pd Power Dissipation	2.941 kW	1.667 kW	1.667 kW
Product Type	RF MOSFET Transistors	RF MOSFET Transistors	RF MOSFET Transistors
Factory Pack Quantity	50	1	1
Subcategory	MOSFETs	MOSFETs	MOSFETs
Vgs Gate Source Voltage	- 6 V, 10 V	- 6 V, 10 V	- 6 V, 10 V
Vgs th Gate Source Threshold Voltage	1.7 V	1.7 V	1.7 V
Part # Aliases	935316371578	935336497598	935335254598
Unit Weight	0.186322 oz	-	-
Series	-	MRF1K50H	MRF1K50H