MRF1K50NR5 vs MRF1K50N-TF4 vs MRF1K50N-TF1

PartNumber	MRF1K50NR5	MRF1K50N-TF4	MRF1K50N-TF1
Description	RF MOSFET Transistors Wideband RF Power LDMOS Transistors, 1.8-500 MHz, 1500 W CW, 50 V	RF MOSFET Transistors MRF1K50N 230 MHz Reference Circuit	RF MOSFET Transistors MRF1K50N 87.5-108 MHz Reference Circuit
Manufacturer	NXP	NXP	NXP
Product Category	RF MOSFET Transistors	RF MOSFET Transistors	RF MOSFET Transistors
RoHS	Y	Y	Y
Transistor Polarity	N-Channel	Dual N-Channel	-
Technology	Si	Si	Si
Id Continuous Drain Current	36 A	100 mA	-
Vds Drain Source Breakdown Voltage	133 V	133 V	-
Gain	23 dB	23 dB	-
Output Power	1.5 kW	1.5 kW	-
Minimum Operating Temperature	- 40 C	- 40 C	-
Maximum Operating Temperature	+ 150 C	+ 105 C	-
Mounting Style	SMD/SMT	SMD/SMT	-
Package / Case	OM-1230-4L	OM-1230-4	-
Packaging	Reel	-	-
Operating Frequency	1.8 MHz to 500 MHz	1.8 MHz to 500 MHz	-
Type	RF Power MOSFET	RF Power MOSFET	-
Brand	NXP / Freescale	NXP / Freescale	NXP / Freescale
Forward Transconductance Min	33.5 S	33.5 S	-
Number of Channels	2 Channel	2 Channel	-
Moisture Sensitive	Yes	-	-
Pd Power Dissipation	2.941 kW	-	-
Product Type	RF MOSFET Transistors	RF MOSFET Transistors	RF MOSFET Transistors
Factory Pack Quantity	50	1	1
Subcategory	MOSFETs	MOSFETs	MOSFETs
Vgs Gate Source Voltage	- 6 V, 10 V	- 6 V, 10 V	-
Vgs th Gate Source Threshold Voltage	1.7 V	1.7 V	-
Part # Aliases	935318822578	935345445598	935341564598
Unit Weight	0.186296 oz	2.205 lbs	0.017637 oz