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| PartNumber | MRF5S19100HSR5 | MRF5S19100HS | MRF5S19100HSR3 |
| Description | RF MOSFET Transistors HV5 LDMOS NI780HS | FET RF 65V 1.99GHZ NI-780S | |
| Manufacturer | NXP | - | - |
| Product Category | RF MOSFET Transistors | - | - |
| RoHS | N | - | - |
| Transistor Polarity | N-Channel | - | - |
| Technology | Si | - | - |
| Vds Drain Source Breakdown Voltage | 65 V | - | - |
| Gain | 13.9 dB | - | - |
| Output Power | 22 W | - | - |
| Minimum Operating Temperature | - 65 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | NI-780S-3 | - | - |
| Packaging | Reel | - | - |
| Configuration | Single | - | - |
| Height | 4.32 mm | - | - |
| Length | 20.7 mm | - | - |
| Operating Frequency | 1.9 GHz to 2 GHz | - | - |
| Type | RF Power MOSFET | - | - |
| Width | 9.91 mm | - | - |
| Brand | NXP / Freescale | - | - |
| Channel Mode | Enhancement | - | - |
| Pd Power Dissipation | 269 W | - | - |
| Product Type | RF MOSFET Transistors | - | - |
| Factory Pack Quantity | 50 | - | - |
| Subcategory | MOSFETs | - | - |
| Vgs Gate Source Voltage | - 0.5 V, 15 V | - | - |
| Vgs th Gate Source Threshold Voltage | 2.7 V | - | - |
| Unit Weight | 0.167294 oz | - | - |